KIOXIA Europe has commenced sample shipments of its 512Gb Triple-Level Cell (TLC) memory devices featuring the latest 9th generation BiCS FLASH™ 3D flash memory technology. Mass production is planned for fiscal year 2025. They were designed to support applications that demand high performance and exceptional power efficiency in low to mid-level storage capacities. These devices will be integral to KIOXIA’s enterprise SSDs, notably those enhancing GPU efficiency in AI systems.
In its quest to meet the needs of cutting-edge applications, KIOXIA adopts a dual-axis strategy aimed at both competitive product delivery and investment efficiency:
- 9th generation BiCS FLASH™ products: Achieving high performance with reduced production costs by leveraging CBA (CMOS directly Bonded to Array) technology. This approach integrates existing memory cell technologies with the latest CMOS technology.
- 10th generation BiCS FLASH™ products: Featuring expanded memory layers to cater to future demands for larger capacity, high-performance solutions.
Developed using a 120-layer stacking process and advanced CMOS technology, the 9th generation BiCS FLASH™ 512Gb TLC shows remarkable improvements over existing BiCS FLASH products with an equivalent capacity:
- Write performance: 61% improvement
- Read performance: 12% enhancement
- Power efficiency: Improved by 36% during write and 27% during read operations
- Data transfer speed: Enabled by the Toggle DDR6.0 interface, achieving 3.6Gb/s NAND interface performance
- Bit density: Increased by 8% through advancements in planar scaling
Demonstrations have confirmed the 512Gb TLC can operate at NAND interface speeds up to 4.8Gb/s. The product line-up will align with market demands ensuring efficient solutions for various sectors, from Internet of Things and automotive to cloud storage and AI-heavy tasks.
KIOXIA remains dedicated to enhancing global partnerships and relentless innovation to deliver solutions finely tuned to customer needs worldwide.
